Develope with GaN (Gallium Nitride) / SiC (Silicon Carbide) MOSFET.
Owe to the excellent performance and high reliability of GaN (Gallium Nitride) components in conduction and switching at high frequencies, and their ability to further reduce the size of peripheral components and improve power density,
GaN power devices have been introduced into power supply applications where compact size and high efficiency are required, such as telecommunications equipment, data center servers, etc., where better power conversion efficiency is needed while maintaining a lightweight and compact design.
Description:
Key technological advantages:
1. Two output drivers with independent UVLO protection.
2. Output voltage from 6.5V to 30V, with 5V, 8V, and 17V UVLO thresholds.
3. 4A peak current source and 8A peak current sink.
4. 150V/ns dV/dt immunity.
5. 36ns typical propagation delay.
6. 8ns maximum delay matching.
7. Programmable input logic.
8. Single or dual input mode through ANB.
9. Programmable dead time.
10. Enable function.
11. Isolation and safety:
a. 5KV rms current isolation from input to each output and 1200V peak differential voltage between output channels.
b. 1200V operating voltage (according to VDE0884-11 requirements).
Specification:
1. Dual low-side, dual high-side, or half-bridge drivers
2. Output power supply voltage ranges from 6.5V to 30V, with 5V, 8V, and 17V UVLO thresholds.
3. 4A peak current source and 8A peak current sink.
Contact: mindplex labs
E-mail: info@mindplexlabs.com
Add: 12 Woodlands Square, #15-68, Woods Square Tower 1, Singapore 737715